PART |
Description |
Maker |
TPC8020-H |
MOSFET TPC Series Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
|
Toshiba Semiconductor
|
IRF5800 IRF5800TR IRF580003 |
Ultra Low On-Resistance, P-Channel MOSFET -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
CMRDM3590 |
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 160 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET ROHS COMPLIANT PACKAGE-6
|
Central Semiconductor Corp Central Semiconductor, Corp.
|
IRF7702GPBF IRF7703GPBF |
HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
|
International Rectifier
|
2SK1450 |
20 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo
|
3HP04SS |
200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
2SK2530 2SK2530TP-FA |
2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
STD22NM20N05 STD22NM20N STD22NM20NT4 |
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET N-CHANNEL 200V - 0.088ヘ - 22A DPAK ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh?/a> II MOSFET
|
STMicroelectronics
|
SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
STD95NH02L-1 STD95NH02L |
N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET Power MOSFET N-channel 24V - 0.0039ヘ - 80A - DPAK - IPAK Ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|